Few-layer graphene direct deposition on Ni and Cu foil by cold-wall chemical vapor deposition

In this paper, a facile cold-wall chemical vapor deposition for direct synthesis of graphene film on Ar plasma treated Ni foil and Cu foil is presented. The carbon source CH
₄
along with the carrier gas N
₂
and H
₂
were introduced into the cold-wall chamber to supply the carbon to form the graphene film on the Ni foil and Cu foil surface. The as-grown graphene films were transferred onto the SiO
₂
/Si (300 nm Si02, electron beam evaporation) by wet-etching of Ni foil and Cu foil with aqueous solution of FeCl
₃
(1 M), which was similar to the report[4]. By optimizing the process parameters, the graphene film grown on Ni foil was compatible to that on Cu foil. Simple Optical microscopy, Raman microscopy and electron scanning microscopy characterization tools were used to check the existence and quality of graphene film on substrates.