Preparation of high and low bandgap amorphous silicon by PECVD and their application in solar cell

Low and high bandgap a-Si:H thin films have been developed by PECVD using helium and hydrogen dilution at high plasma power regime. The growth kinetics are completely different for the two cases. The optoelectronic properties are comparable to those of device quality high and low bandgap alloy materials whereas light induced degradations are less. Structural studies have revealed the presence of nanocrystallites in amorphous matrix in both the materials. Both type of materials have been used as intrinsic layers of single junction solar cells.