Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Multi-physics modeling offers rich opportunities for studying the properties of through-silicon vias (TSV). Results of a TSV study with the theories of electromagnetics, semiconductor physics, and thermal physics are presented. Equivalent circuit models are used to draw together the three different theories to perform the TSV modeling. Moreover, a single TSV is examined for high-speed signal transmission with surface waves. Some pertinent questions are posed regarding multi-physics modeling of TSVs.