Broadband monolitic IC on GaAs heterostructures for time quantized control of amplitude and phase of microwave oscillations with inbuilt driver

The results of co-developing of industrial design of monolithic integrated circuits of three types with TTL control on the basis of GaAs heterostructures, operating in the frequency range 8,0 - 12 GHz by the teams of specialists of SPE “Istok”, Moscow Institute of Electronic Technology, S. Petersburg Academic University - REC of Nanotechnologies of Russian Academy of Science are presented: 6-bit active phase switcher; 5-bit attenuator; 2-way switch; Switch operation time -10 ns