Experimental Investigation of Quasi-Ballistic Carrier Transport Characteristics in 10-nm Scale MOSFETs

In this paper, experimental investigation on quasi-ballistic carrier transportation is carried out in 10-nm scale MOSFETs. In order to extract some ballistic parameters, the channel inversion charge by the RF C–V technique is quantitatively calculated. Also, the effective channel length and the carrier mobility are carefully analyzed to calculate the mean free path in the channel region. It is found that in case of ultrashort-channel devices, carriers in the channel region are scattered few times. Especially, the shortest device has 11 nm effective channel length, and it showed almost 50% of ballistic efficiency. From this result, it is confirmed that planar MOSFETs are also operated in the quasi-ballistic region as its effective channel length approaches near 10 nm.