Improved ESD protection in advanced FDSOI by using hybrid SOI/bulk Co-integration

We investigate the influence of different technological parameters on ESD robustness in advanced FDSOI devices. From Transmission Line Pulse (TLP) measurements, a comparison with other technologies enables us to evaluate the impact of ultrathin film and buried oxide. A solution based on hybrid SOI/bulk co-integration by using Silicon-On-Nothing technology is presented in order to improve ultra-thin film ESD performance.