Sub-60nm Si tunnel field effect transistors with Ion >100 µA/µm

Si-tunneling field effect transistors (TFETs) with a record I
on
>100 µA/µm and high I
on
/I
off
ratio (> 10
⁵
) at V
ds
=1V are reported. Using an optimal spike and millisec flash anneal coupled with an engineered source-gate overlap through a gate-last process, Si TFETs have been demonstrated with 10 to 1000 times greater current than previously reported. The devices exhibit negative differential resistance and temperature dependencies consistent with band-to-band tunneling and current characteristics in excellent agreement with 2D TCAD simulations.