Temperature dependent dielectric absorption characterization and modeling for SiN, Al2O3 and Ta2O5

This paper reports temperature dependant dielectric absorption measurements of SiN, Al
₂
O
₃
and Ta
₂
O
₅
MIM capacitors between 100Hz and 10GHz over a broad temperature range. The SiN dielectric clearly shows a temperature dependent dielectric absorption whereas for Al
₂
O
₃
and Ta
₂
O
₅
the effect is nearly temperature independent. A model is proposed for the 3 dielectric materials which takes into account dielectric absorption and temperature dependence. Depending on the dielectric material the extraction strategy has to be modified. The temperature dependence of the capacitance has to be split between temperature coefficient and temperature dependent dielectric absorption.