Output power density higher than 1 W/mm at 4 GHz thanks to an original silicon LDEMOS transistor layout

This paper describes an original silicon nLDEMOS transistor layout which allows improving the microwave power performances. Results of DC, small and large signal measurements are presented and compared between the standard and the original layouts. Regarding the power performances (power density, power added efficiency, power gain), this confrontation shows clearly the interest in using the original layout. At 4 GHz, a 1 W/mm power density was obtained with a drain-to-source voltage of 10 V.