High frequency performance of Tellurium σ-doped AlSb/InAs HEMTs at low power supply

In this paper, we present a set of characteristics (DC, f
_t
, f
_max
, extrinsic and intrinsic parameters) of a 120 nm gate length InAs/AlSb high electron mobility transistor (HEMT) with a doping plane of Tellurium (Te) operating at room temperature (RT) and low power conditions. A cut-off frequency f
_t
equal to 103 GHz has been achieved at 100 mV trough the reduction of gate-channel distance and the change of dopant type. It opens up the possibility to develop an ultra low power electronics, featuring excellent high frequency performances below 100 mV DC biasing.