Influence of polar face on optical properties of staggered 440 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

The influence of the polar plane on optical properties of staggered InGaN/InGaN/GaN quantum well (QW) light-emitting diodes was investigated using the multiband effective mass theory. The N-face staggered InGaN/InGaN/GaN QW structure has a greater spontaneous emission peak than the Ga-face staggered InGaN/InGaN/GaN QW structure because the before has a larger matrix element than the latter. On the other hand, the heavy-hole effective mass around the topmost valence band is not affected nearly by the polarity. We expect that the N-face staggered InGaN/InGaN/GaN QW structure has an improved characteristics compared to the Ga-face staggered InGaN/InGaN/GaN QW structure.