2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers

Distributed-feedback (DFB) buried-heterostructure (BH) lasers with quantum-well active region emitting at 2.0 μm have been fabricated and characterized. The lasers with four wells showed performance of practical use: threshold current as low as 15 mA for 600-μm-long devices and CW single-mode output up to 5 mW at 2.03 μm under operation current of 100 mA were observed. The current- and temperature-tuning rates of DFB mode wavelength are 0.004 nm/mA and 0.125 nm/K, respectively.