Low voltage electrowetting on atomic-layer-deposited aluminum oxide

Electrowetting on dielectric (EWOD) is useful in manipulating droplets for digital (droplet-based) microfluidics, but its high driving voltage over several tens of volts has been a barrier to overcome. This paper presents the characteristics of EWOD device with aluminum oxide (Al
₂
O
₃
, ε
_r
≈10), deposited by atomic layer deposition (ALD), as the high-k dielectric for lowering the EWOD driving voltage substantially. The EWOD device of the single-plate configuration was fabricated by several steps for the control electrode array of 1 mm × 1 mm squares with 50 μm space, the dielectric layer of 127 nm thick ALD Al
₂
O
₃
, the reference electrode of 20 μm wide line electrode, and the hydrophobic surface treatment by Teflon-AF coating, respectively. We observed the movement of a 2 μl water droplet in an air environment, applying a voltage between one of the control electrodes and the reference electrode in contact with the droplet. Exponentially increasing droplet velocity with the applied voltage was obtained below 15V. The measured threshold voltage to move the droplet was as low as 3V which is the lowest voltage reported so far in the EWOD researches. This result opens a possibility of manipulating droplets, without any surfactant or oil treatment, at only a few volts by EWOD using ALD Al
₂
O
₃
as the dielectric.