Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and Reliability

The operation and reliability of nonvolatile memory concepts based on charge storage in nitride layers, such as TANOS
$(\hbox{TaN/Al}_{2}\hbox{O}_{3}/\hbox{Si}_{3}\hbox{N}_{4}/ \hbox{SiO}_{2}/\hbox{Si})$
, require detailed information on the energy and spatial distribution of the charge defects in both the nitride and the
$\hbox{Al}_{2}\hbox{O}_{3}$
blocking dielectric. This paper focuses on the characterization of
$ \hbox{Al}_{2}\hbox{O}_{3}$
. We have successfully applied complementary trap characterization techniques to crystalline
$\gamma$
-phase-
$\hbox{Al}_{2}\hbox{O}_{3}$
in order to obtain a complete picture of the spatial and energetic distribution of the defect density. As a result, two defect types at energy levels 1.8 and 3.5 eV below the conduction band edge are found.