Nanoscale Si/SiO2 double-barrier structures produced by plasma-chemical technology

Si\SiO
2
double-barrier structures with ultrathin nanoscale layers were developed by using α-Si:H thin film depositions and subsequently plasma enhanced oxidation. The experimental equipment with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The electrical properties of the manufactured MOS-structures were investigated through measurement of C-V and I–V characteristics. In the experiments we observed the charge effects related to the process of carrier transport through thin dielectric. Furthermore, the areas of differential negative resistance in I–V characteristics were detected. These structures can be used as resonant tunneling diodes.