Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs

The variability of the TiN FinFET SRAM cell performance is analyzed. It is experimentally demonstrated that the V
_th
-controllable independent-double-gate (IDG) FinFET technology successfully improves the variation problems in SRAM performance. As a result, the IDG-FinFET technology enables 0.5-V SRAM operation with high cell stability.