Gate-First $\hbox{TaN/La}_{2}\hbox{O}_{3}/ \hbox{SiO}_{2}/\hbox{Ge}$ n-MOSFETs Using Laser Annealing

To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Ω/sq, a small ideality factor of 1.3, and a large ~10
⁵
forward\reverse current in the source-drain n
⁺
/p junction. The laser-annealed gate-first TaN/La
₂
O
₃
/SiO
₂
/Ge n-MOSFETs showed a high mobility of 603 cm
²
/Vs and a good mobility of 304 cm
²
/Vs at a 1.9-nm equivalent oxide thickness.