Low threshold and high uniformity for novel 1.3-μm-strained InGaAsP MQW DC-PBH LDs fabricated by the all-selective MOVPE technique

1.3-μm-strained InGaAsP multiquantum-well (MQW) double-channel planar buried heterostructure laser diodes (DC-PBH-LDs) were fabricated by all-selective metalorganic vapor phase epitaxy (MOVPE). In the fabrication process, the strained MQW active layer and current-blocking structures were directly formed by selective MOVPE without a semiconductor etching process. A low-threshold current (I/sub th/=2.6 mA@25/spl deg/C for 200-μm-long 70%-90% facets) and excellent high-temperature operation (T
₀
=84 K, 25/spl deg/C-60/spl deg/C and T
₀
=70 K, 25/spl deg/C-85/spl deg/C) were achieved. Furthermore, extremely uniform threshold current and slope efficiency were observed, The median time to failure for these LDs was estimated to be more than 100000 h under the 85/spl deg/C-5 mW aging condition.