High-k/Ge p- & n-MISFETs with strontium germanide interlayer for EOT scalable CMIS application

High-k/Ge with strontium germanide interlayer has been applied for both p- and n-MISFETs. The observed J
_g
-EOT trend in the Ge-MISCAPs exhibits comparable or superior leakage characteristics to that of state-of-the-art HfSiON gate dielectrics on Si down to an EOT of 0.96nm. The drive current of the p-MISFETs increases with the EOT scaling around 1nm without μ
_eff
degradation. Furthermore, reasonable V
_th
values are observed in both p- and n-MISFETs. These results suggest applicability of the SrGe
_x
interlayer to high-k/Ge CMISFETs.