Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits

Reconfigurability of a novel spintronics-based MOSFET; “Spin-transfer-Torque-Switching MOSFET (STS-MOSFET)” was successfully realized in the transport properties. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10
⁵
cycles. It was clarified that the read and write characteristics (i.e., MC ratio and write voltage) can be improved by choosing connection configurations of the source and the drain in the STS-MOSFETs. Large scale circuit simulations for various circuits in FPGA revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.