High performance and low driving voltage amorphous InGaZnO thin-film transistors using high-к HfSiO dielectrics

Thin-film transistors were fabricated using amorphous indium gallium zinc oxide (α-IGZO) as channels and high-κ material HfSiO as gate dielectric by RF sputtering. The influence of high-κ PDA temperature variation on device characteristics was investigated. The bottom-gate low voltage driven (≤ 2 V) TFTs operated in n-type enhancement mode with a field-effect mobility of 12.7cm
²
/V-s, on-off current ratio of 3 × 10
⁵
, threshold voltage of 0.005V, and subthreshold voltage swing of 0.11V/dec.