Factors enhancing In0.7Ga0.3As MOSFETs and tunneling FETs device performance

We demonstrate key factors enabling mobility improvement at both low charge density and high density (>5 × 10
¹²
/cm
²
) in In
_0.7
Ga
_0.3
As quantum-well MOSFETs. We further show sub-threshold swing (SS) and on-current (I
_d
) improvement in tunneling FETs (TFETs). By reducing EOT, optimizing the top-barrier/high-κ interface, and confining carriers in In
_0.7
Ga
_0.3
As channel using In
_0.52
Al
_0.48
As bottom-barrier, SS and mobility of MOSFETs were improved from 152 to 99 mV/dec and from ~2500 to ~5000 cm
²
/V-s, respectively. TFETs achieved small SS (96 mV/dec) and high I
_d
(55 μA/μm) due to low EOT and abrupt, vertical insitu grown III-V epitaxial junctions.