Study on the effect of metal contact (Pt, Pd and Au) to the electrical and physical properties of MgxZnx−1O thin film for FET applications

Sol-gel method with spin coating technique has been used to deposit the Mg
_x
Zn
_x-1
O (0.0<;x<;0.3) thin film. By using silicon as a substrate, this thin film being deposited and being annealed at 550°C in an hour. This is done to investigate the consequences of a different dopant concentration with different metal contact to the electrical and physical properties of the thin film. The IV characteristic has been investigated using IV probe measurement system and the physical properties being analyzed by using FESEM and AFM machine. The result shows that the higher percentage of dopant gave bigger size to the grain. The conductivity of the thin film also decreased and gave a different reading for different metal contact.