Improvement of efficiency for red resonantcavity light-emitting diodes using periodic gain medium with modified electron stopped layers

The analysis of electro-optical properties of 635 nm InGaP/InGaAlP resonant-cavity light-emitting diodes (RCLED) with AlGaAs mirrors is presented. We show that including the periodic gain medium with slightly p-doped electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells and decreasing the electrical field across the active layer.