SiGe-technology and components for mobile communication systems

SiGe-HBTs offer the opportunity to build integrated front-ends for mobile communication systems above 1 GHz. SiGe-HBTs with 50 GHz f/sub T/ and f/sub max/ were obtained by a production process including poly-silicon resistors, nitride capacitors and spiral inductors showing Q values up to 10. RF-noise figures down to 1 dB at 2 GHz with an associated gain of 14 dB and 1 Hz 1/f corner frequency were obtained. Class A load pull measurements on power SiGe-HBTs at 1.9 GHz exhibited a power added efficiency (PAE) of 44% at 1W RF output power. Power amplifiers, low noise amplifiers and mixer circuits are presently under investigation.