High surge current ruggedness of 5kV class 4H-SiC SiCGT

The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200°C, a higher temperature than Si device's destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm
²
) per one chip. Positive temperature coefficient resistor behavior could be found during the destruction of SiCGT, which was different from the destruction of Si diodes.