Wide Cell Pitch LPT(II)-CSTBT™(III) technology rating up to 6500 V for low loss

In this paper, an advanced High Voltage (HV) IGBT technology, which is focused on low loss and is the ultimate device concept for HV IGBT, is presented. CSTBT
^TM
technology utilizing “ULSI technology” and “Light Punch-Through (LPT) II technology” (i.e. narrow Wide Cell Pitch LPT(II)-CSTBT(III)) for the first time demonstrates breaking through the limitation of HV IGBT's characteristics with voltage ratings ranging from 2500 V up to 6500 V. The improved significant trade-off characteristic between on-state voltage (V
_CE
(sat)) and turn-off loss (E
_OFF
) is achieved by means of a “narrow Wide Cell Pitch CSTBT(III) cell”. In addition, this device achieves a wide operating junction temperature (@218 ~ 448K) and excellent short circuit behavior with the new cell and vertical designs. The LPT(II) concept is utilized for ensuring controllable IGBT characteristics and achieving a thin N
^-
drift layer. Our results cover design of the Wide Cell Pitch LPT(II)-CSTBT(III) technology and demonstrate high total performance with a great improvement potential.