Modeling transient diffusion following high energy implantation

The increasing use of high energy implantation (HEI) in tub formation, combined with the use of low temperature gate processing, leads to the potential for strong Transient Enhanced Diffusion (TED) effects in the channel profile. We have discovered through simulation and experiment an unexpected saturation of TED broadening in surface profiles. A profiled tub replacement using HEI in a manufacturing 0.5 /spl mu/m CMOS flow was designed through simulation.