Modeling of boron, phosphorus, and arsenic implants into single-crystal silicon over a wide energy range (few keV to several MeV)

In this paper is presented for the first time an accurate, physically based simulator for boron, arsenic, and phosphorus ion implantation covering a very wide range of energies from a few keV to several MeV. This wide range of energies, as well as on-axis and off-axis implantations, is covered by a single, comprehensive model. Combined with previously developed models for damage accumulation, this model allows physically-based simulation of 3-D profiles over an extremely wide range of implant conditions.