A new high temperature electrode-barrier technology on high density ferroelectric capacitor structure

This paper describes the novel stacked electrode structure, PtRhOx/PtRh/PtRhOx, applicable to stacked memory cells in the advanced ferroelectric memories. This structure acts as a stable bottom electrode on the polysilicon plug up to 700/spl deg/C, and reduces fatigue of PZT capacitor (less than 10% decrease in remanent polarization up to 10/sup 10/cycle), which indicates its promise as an electrode structure for advanced ferroelectric memory integration.