Achievement and perspective of GaN technology for microwave applications

This paper give an overview of some recent results obtained by Alcatel-Thales III-V Lab using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation will give an overview of results obtained using new InAlN/GaN heterostructures, which is expected to offer similar output power but with improved efficiencies and to cope with higher working frequencies.