Low resistive ultra shallow junction for sub 0.1 /spl mu/m MOSFETs formed by Sb implantation

Nineteen-nm depth ultra shallow and 1.7 k/spl Omega//sq. low resistive junctions were fabricated by Sb implantation. The shallowness of the junction is attributed to the low diffusive nature of Sb. The junction was applied to 0.15 /spl mu/m MOSFETs, and excellent suppression of short channel effect and G/sub m/ improvement were confirmed.