32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit

A low-cost and high-manufacturability Multi-V
_T
Ultra-Thin BOX and Body (UT2B) FDSOI technology is proposed for high-performance and low-leakage digital circuits. This concept allows setting up low, standard and high threshold voltage (V
_T
) devices without degrading the good channel electrostatic control and the low V
_T
dispersion of the FDSOI technology. Device electrical characteristics, process flow and physical design are described and the performance of digital circuits is evaluated.