A novel lateral field emitter triode with insitu vacuum encapsulation

We have designed and fabricated a novel lateral field emitter triode, which is in-situ vacuum encapsulated so that any troublesome additional vacuum sealing process is not required. The device exhibits low turn-on voltage of 7 V, stable current density of 2 /spl mu/A/tip at V/sub AC/=30 V, and high transconductance of 1.7 /spl mu/S at V/sub AC/=22 V. An in-situ vacuum encapsulation employing recessed cavities by isotropic RIE (Reactive Ion Etch) method and an electron beam evaporated molybdenum vacuum seals is implemented to fabricate a new field emitter triode.