Influence of oxidation rate and post-metallization annealing on distributions of deep interface traps in 4H-n-SiC∶SiO2

The dependence of mid-gap and border trap content in SiO
_2:
Si interfaces on oxidation rate in thermally oxidized n-type 4H-SiC was studied using a modified C-V hysteresis method. The minimum deep trap content oxidation conditions where found. It was also shown that the process of post metallization annealing further decreased the density of slow-switching traps in all cases.