A continuous compact MOSFET model for SOI with automatic transitions between fully and partially depleted device behavior

A fully continuous compact SOI model for circuit simulations, that automatically accounts for the correct body depletion condition, is presented. Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, the model described here accounts for the possible transitions between FD and PD behavior during the device operation.