InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 μm grown by metal-organic chemical vapor deposition

InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse mode and 300 mW in continuous wave operation with 400-μm cavity length and 100-μm-wide aperture at 78 K have been obtained. These devices showed low threshold current density of 40 A/cm
²
, low internal loss of 3.0 cm/sup -1/, far-field /spl theta//sub /spl perp// of 34/spl deg/ with differential efficiency of 90% at 78 K, and high operating temperatures of 220 K.