Experimental dielectric sensing of materials using Epsilon-Near-Zero tunnel in SIW technology

A planar Epsilon-Near-Zero (ENZ) structure implemented on substrate integrated waveguide technology is used for the characterization of material dielectric permittivity. The proposed structure has very high sensitivity which yields more accurate results when compared to other techniques, such as perturbation of conventional cavities. This prototype presents a low profile, low cost, ease of fabrication and ease of integration, which add important characteristics for portable material analysis systems. Measurements are in good agreement with standard values.