Electrical properties of a-C thin film deposited using methane gas as precursor

Amorphous carbon (a-C) thin films were deposited on quartz substrate at various temperatures with thermal chemical vapor deposition (CVD) technique using methane gas as precursor. The deposited a-C thin films were characterized by Current Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. In this experiment, the pyrolysis process was successful to analyse the electrical and optical properties of a-C thin films deposited by thermal CVD using methane gas. The a-C films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, the resistivity is lower and thus gives the conductivity of a-C thin films increased due to the relation between the resistivity and conductivity are inversely proportional.