Absorber and gain dynamics in dilute nitride mode-locked lasers

We report a comparison between the high-speed gain and absorber dynamics of dilute nitride laser structures utilising GaAs or GaAsN barrier layers. The inclusion of dilute nitride barriers greatly reduces the absorber recovery time. The wafers were processed into two-section monolithic mode-locked lasers generating 2-5 ps pulses at 40 GHz.