Alpha-particle-induced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM

This paper presents measurement results of alpha-particle-induced soft errors and multiple cell upsets (MCUs) in 65-nm 10 T SRAM with a wide range of supply voltage from 1.0 V to 0.3 V. We reveal that the soft error rate (SER) at 0.3 V is eight times higher than SER at 1.0 V, and the ratio of MCUs to the total upsets increases as the supply voltage decreases. The SER and ratio of MCUs with body-biasing are also described. In addition, we investigate an impact of manufacturing variability on the soft error immunity of each memory cell. In our measurement, a distinct influence of manufacturing variability is not observed even in subthreshold region.