High-Speed 1.3-$\mu\hbox{m}$ p-i-n GaNAsSb/GaAs Waveguide Photodetector

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i -n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4- m-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 m is sandwiched by GaAs and AlGaAs cladding layers. The device exhibits a record value of cutoff frequency of 16.5 GHz.