CMOS-Microwave Wideband Amplifiers and Mixers on SIMOX-Substrates

Today's technologies exhibit excellent performance for specific applications, e.g. CMOS for VLSI circuits, bipolar for precision analog signal processing, and GaAs for very high speed circuits. In future telecommunication products the monolithic integration of many of these functions will be mandatory. An improved CMOS-technology on silicon-on-insulator (SOI) substrates which allows the realization of RF-system components has been developed. In this contribution we present a 7dB, 0-4,5GHz bandwidth CMOS distributed amplifier and a 1GHz CMOS-mixer intended for use in RF-applications.