The mixed mode 4H-SiC SIT as an S-band microwave power transistor

Summary form only given. For the first time, mixed mode 4H-SiC SIT (Static Induction Transistor) devices have been operated for power generation at S-band frequencies. This paper discusses why the SIT is an excellent choice for microwave power transistors in SiC, the technology for SIT fabrication and packaging, and the performance of the first 3.0 GHz SiC power SITs.