GaN HFETs and MODFETs with very high breakdown voltage and large transconductance

We have successfully fabricated GaN HFETs and MODFETs with very high breakdown voltage and large transconductance. In particular, a gate-drain breakdown voltage well exceeding 100 V, g/sub m/ up to 120 mS/mm, channel current density >300 mA/mm were realized in the same MODFET. These performances are attributed to the good crystal quality film close the substrate.