Simulation of a high performance MOSFET with a quantum wire structure incorporating a periodically bent Si-SiO/sub 2/ interface

A MOSFET using a serrated quantum wire structure that produces one-dimensional electron confinement shows excellent subthreshold characteristics and enhanced drive capability compared to a conventional MOSFET with a flat Si-SiO/sub 2/ interface. We studied the quantum wire structure with its periodically bent Si-SiO/sub 2/ interface using simulations. The potential in the convex regions of the silicon is 0.34 V higher than that in the concave ones when the bending angle is 90/spl deg/, the bending period is 100 nm, substrate doping is 3.0/spl times/10/sup 17/ cm/sup -3/, and a gate voltage is 0.1 V. Because of this increase in potential in the convex regions, electrons are confined in a narrow width of 13 nm in the convex regions. This 1-D electron confinement effect by the bent Si-SiO/sub 2/ interface is clearly observed at low gate voltage and is reduced as the gate voltage becomes higher. Due to the confinement effect, drain current in the MOSFET with this quantum wire structure is 270 times higher than that of a MOSFET with a flat Si-SiO/sub 2/ interface at a gate voltage of 0.05 V. In addition, the short-channel effect is more effectively suppressed in this MOSFET than in a conventional MOSFET.