Effect of the various doping concentration of BF2+ on polysilicon-gate PMOS

This paper presents the effect of various doping concentration of BF
2
⁺
polysilicon from 10
¹¹
to 10
²⁰
(atoms/cm
³
) for PMOS device using SILVACO TCAD (Technology Computer Aided Design) software. The threshold voltage of polysilicon obtain from I
D
-V
GS
curve was analyzed. The results show that BF
2
⁺
at dose 10
¹⁴
to 10
¹⁹
(atoms/cm
³
) giving the better characteristics of the PMOS at the threshold voltage between 1.0V to 1.3V. The resistivity of the polysilicon is gradually decreased as a concentration of doping increase, while the conductivity is reciprocal of the resistivity. The resistivity of polysilicon varies considerably depending upon the requirement in PMOS applications. To determine the better doping, the leakage current can be extracted from the I-V curve.