Validation of the 2 Temperatures Noise Model Using Pre-Matched Transistors in W-Band for Sub-65 nm Technology

This letter presents high frequency noise measurements carried out for MOSFETs in W-band (75-110 GHz). Because the 50 ¿ noise figure of 65 nm node MOSFETs is higher than 10 dB in W-band, pre-matched structures covering the entire band have been developed to reduce the noise figure and to increase the gain. Then, in order to validate the 2 temperatures noise model in W-band, only F50 measurements of pre-matched structures are necessary.