On the Microwave Low Temperature Analysis Behaviour of HEMTs

Low temperature behaviour of HEMTs is studied under static and microwave conditions. The influence of trapping effects are analysed by means of a specified measurement procedure of the gate capacitance and drain-source resistance, On an appropriate structure that allOws to avoid parasitic phenomena such as collapse, it was found that microwave transconductance and cut-off frequency improve, which 1s confirmed with numerical results.