JFET for Completely Depleted High Resistivity Silicon

The design and the experimental results of a new class of JFETs, suitable for integration on the high resistivity wafer of a fully depleted radiation detector, are presented. These devices will make possible the integration of a low noise preamplifier directly on the detector, improving the achievable resolution. The new JFET has a measured gm/ID of 1/850 mV
^-1
, a pinch-off of 1.5V and a designed g
m
/C
G
of 500 MHz.